PART |
Description |
Maker |
MT6V16M18F2-3C |
16M X 18 RAMBUS, 45 ns, PBGA84 FBGA-84
|
Austin Semiconductor, Inc
|
HYI18T256160BF-25F HYI18T256160BC-25F HYB18T256160 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84 GREEN, PLASTIC, TFBGA-84 16M X 16 DDR DRAM, 0.4 ns, PBGA84 PLASTIC, TFBGA-84 16M X 16 DDR DRAM, 0.45 ns, PBGA84 16M X 16 DDR DRAM, 0.5 ns, PBGA84 64M X 4 DDR DRAM, 0.45 ns, PBGA60
|
Qimonda AG
|
W9751G8JB W9751G8JB-3 |
16M ?4 BANKS ?8 BIT DDR2 SDRAM DDR DRAM, PBGA84
|
Winbond WINBOND ELECTRONICS CORP
|
HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM 64M X 4 DDR DRAM, PBGA60 16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
HYR166430G-840 HYR163230G-840 HYR166430G-845 HYR16 |
288MB Rambus RIMM Modules(288MRambus RIMM 模块) RAMBUS DRAM Module Rambus的内
|
SIEMENS AG Infineon Technologies AG
|
HYMR16418H-850 HYMR13218H-840 HYMR14818H-840 HYMR1 |
64M X 18 RAMBUS MODULE, 50 ns, DMA184 RIMM-184 32M X 18 RAMBUS MODULE, 40 ns, DMA184 RIMM-184 48M X 18 RAMBUS MODULE, 40 ns, DMA184 RIMM-184 32M X 16 RAMBUS MODULE, 53 ns, DMA184 32M X 16 RAMBUS MODULE, 40 ns, DMA184 32M X 16 RAMBUS MODULE, 45 ns, DMA184 32M X 18 RAMBUS MODULE, 45 ns, DMA184
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
MC-4R512FKK8K MC-4R512FKK8K-840 |
512MB 32-bit Direct Rambus DRAM RIMM Module 256M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
MC-4R128FKK8K-840 MC-4R128FKK8K |
128MB 32-bit Direct Rambus DRAM RIMM Module 128MB2位直接Rambus的内存RIMM的模 128MB 32-bit Direct Rambus DRAM RIMM Module 64M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
LH28F160BJHE-TTL90 LHF16J04 |
16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M 1Mx16 / 2Mx8 )Boot Block 闪速存储器) Flash Memory 16M (1M × 16/2M × 8)
|
Sharp Corporation Sharp Electrionic Components
|
KMM53216000BV |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|